Band to Band Tunneling Study in High Mobility Materials : III-V, Si, Ge and strained SiGe

Author

Kim, Donghyun ; Krishnamohan, Tejas ; Smith, Lee ; Wong, H. S Philip ; Saraswat, Krishna C.

Author_Institution

Stanford Univ., Stanford

fYear

2007

fDate

18-20 June 2007

Firstpage

57

Lastpage

58

Abstract

Based on the complex bandstructure obtained by local empirical pseudopotential method (LEPM), we have developed a band to band tunneling model (BTBT), which captures band structure information, all possible transitions between different valleys, energy quantization and quantized density of states. Theoretical model is verified by experimental study on tunnel diodes on various semiconductors. BTBT leakage current in high mobility (mu) channel double gate FET is studied. We have shown that quantum confinement effect in DGFET can suppress BTBT leakage current.

Keywords

Ge-Si alloys; III-V semiconductors; band structure; elemental semiconductors; field effect transistors; germanium; leakage currents; silicon; tunnelling; BTBT leakage current; DGFET; Ge; III-V materials; Si; SiGe; band structure information; band to band tunneling study; complex bandstructure; energy quantization; high mobility channel double gate FET; high mobility materials; local empirical pseudopotential method; quantized density of states; quantum confinement effect; tunnel diodes; Double-gate FETs; Energy capture; Germanium silicon alloys; III-V semiconductor materials; Leakage current; Potential well; Quantization; Semiconductor diodes; Silicon germanium; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373650

Filename

4373650