• DocumentCode
    1958327
  • Title

    Germanium-on-glass solar cells

  • Author

    Colace, Lorenzo ; Sorianello, Vito ; Maragliano, Carlo ; Assanto, Gaetano ; Fulgoni, D. ; Nash, L. ; Palmer, M.

  • Author_Institution
    Dept. Electron. Eng., Univ. “Roma Tre”, Rome, Italy
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    255
  • Lastpage
    257
  • Abstract
    We report on the fabrication and characterization of Ge solar cells on glass realized by layer transfer and epitaxial regrowth. These devices exhibit typical conversion efficiency exceeding 2.4% under AM1.5 irradiation and maximum efficiency of 3.7% under concentrated excitation. This approach enables flexible and affordable multi-junction engineering for solar energy conversion.
  • Keywords
    elemental semiconductors; epitaxial growth; germanium; glass; semiconductor growth; semiconductor-insulator boundaries; solar cells; wafer bonding; Ge-SiO2; concentrated excitation; conversion efficiency; epitaxial regrowth; germanium-on-glass solar cells; layer transfer; maximum efficiency; multijunction engineering; solar energy conversion; Epitaxial growth; Germanium; Glass; Performance evaluation; Photovoltaic cells; Silicon; Substrates; germanium; solar cells; wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053781
  • Filename
    6053781