DocumentCode
1958339
Title
4H-SiC RF BJTs with Long Pulse L-band Operation
Author
Zhao, Feng ; Shi, Tiefeng ; Mallinger, Mike ; Van Zeghbroeck, B.
Author_Institution
Microsemi Corp., Bend
fYear
2007
fDate
18-20 June 2007
Firstpage
71
Lastpage
72
Abstract
In this paper, we present L-band 4H-SiC RF BJTs on a conductive substrate capable of delivering an output power of 28.2 W and a power gain of 7.5 dB at 1.4 GHz under long pulse and duty cycle. The power density is 11.8 W/mm, which is comparable to the UHF devices while almost 6 times of reported L-band devices.
Keywords
UHF circuits; bipolar transistors; silicon compounds; L band operation; RF BJT; SiC; UHF devices; duty cycle; frequency 1.4 GHz; gain 7.5 dB; long pulse; power 28.2 W; power density; Contact resistance; Fabrication; Gain; L-band; Packaging; Power generation; Radar applications; Radio frequency; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373655
Filename
4373655
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