Title :
Room-temperature lasing of type-II "W" GaSb/GaAs quantum dots embedded in InGaAs quantum well
Author :
Tatebayashi, J. ; Khoshakhlagh, A. ; Balakrishnan, G. ; Huang, S.H. ; Mehta, M. ; Dawson, L.R. ; Huffaker, D.L.
Author_Institution :
New Mexico Univ., Albuquerque
Abstract :
We report the device characteristics of type-II "W" stacked GaSb/GaAs QDs embedded in an InGaAs QW at room temperature (RT). The lasing at RT from 5 stacked GaSb QDs in InGaAs QWs is obtained at a wavelength of 1.026 mum with 2 mm cavity length. A large blueshift of the electroluminescence (EL) peak, which is typical of the type-II geometry, is observed by increasing the injection current densities. It is noted that this is the first demonstration of RT lasing of type-II QDs.
Keywords :
III-V semiconductors; current density; electroluminescence; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser variables measurement; quantum dot lasers; quantum well lasers; spectral line shift; GaSb-GaAs-InGaAs; blueshift; device characteristics; electroluminescence peak; embedded quantum wells; injection current densities; room-temperature lasing action; size 2 mm; temperature 293 K to 298 K; type-II W quantum dots; wavelength 1.026 mum; Atomic force microscopy; Charge carrier processes; Current density; Gallium arsenide; Gas lasers; Indium gallium arsenide; Photonic band gap; Power lasers; Quantum dots; Substrates;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373656
