DocumentCode :
1958373
Title :
Direct measurement of spurious mode properties in thin film BAW resonator
Author :
Kokkonen, Kimmo ; Pensala, Tuomas ; Meltaus, Johanna ; Kaivola, Matti
Author_Institution :
Dept. of Appl. Phys., Aalto Univ., Aalto, Finland
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
420
Lastpage :
423
Abstract :
The acoustic wave fields excited in a 1.8 GHz AlN thin film bulk acoustic wave resonator are measured in detail with a heterodyne laser interferometer. The electrical response of the resonator exhibits a strong thickness resonance onto which spurious modes, caused by lateral standing plate waves, are superposed. The acoustic wave fields are measured with a heterodyne interferometer and are used to calculate dispersion diagram of the laterally propagating waves responsible for the spurious electrical responses. The dispersion diagram features a discrete eigenmode spectrum due to the finite lateral dimensions of the resonator. An equivalent circuit model for a multi-mode resonator is fitted to the mechanical resonator response extracted along a single curve in the dispersion diagram, and is used to determine properties, such as Q-values, of the individual lateral eigenmodes. Measured wave field images, extracted dispersion curves, and the eigenmode spectrum with the model fitting results are presented.
Keywords :
III-V semiconductors; UHF resonators; acoustic dispersion; acoustic resonators; acoustic variables measurement; acoustic wave propagation; bulk acoustic wave devices; eigenvalues and eigenfunctions; equivalent circuits; light interferometry; measurement by laser beam; thin film devices; wide band gap semiconductors; AlN; acoustic wave field measurement; direct measurement; discrete eigenmode spectrum; dispersion curves; dispersion diagram; equivalent circuit model; frequency 1.8 GHz; heterodyne laser interferometer; lateral standing plate waves; laterally propagating waves; mechanical resonator response; model fitting; multimode resonator; spurious electrical response; spurious mode properties; thin film BAW resonator; thin film bulk acoustic wave resonator; Acoustic measurements; Acoustic waves; Dispersion; Optical resonators; Resonant frequency; Vibrations;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2010 IEEE
Conference_Location :
San Diego, CA
ISSN :
1948-5719
Print_ISBN :
978-1-4577-0382-9
Type :
conf
DOI :
10.1109/ULTSYM.2010.5935750
Filename :
5935750
Link To Document :
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