Microwave Noise Characterization of Enhancement-Mode AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

Author

Liu, J. ; Song, D. ; Cheng, Z. ; Tang, W.C.-W. ; Lau, K.M. ; Chen, K.J.

Author_Institution

Hong Kong Univ. of Sci. & Technol., Kowloon

fYear

2007

fDate

18-20 June 2007

Firstpage

77

Lastpage

78

Abstract

In this work, we report the microwave noise characterization of E-mode double-heterojunction HEMT (DH-HEMT). The E-mode DH-HEMT shows reduced noise figure compared to its D-mode counterpart, mainly owing to the lower gate leakage current achieved by the Schottky barrier enhancement in fluorine-plasma treated gate region and the favorable bias conditions for the E-mode HEMT.

Keywords

III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; leakage currents; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device noise; wide band gap semiconductors; AlGaN-GaN-InGaN-GaN; Schottky barrier enhancement; enhancement-mode double-heterojunction HEMT; fluorine-plasma treated gate region; gate leakage current; microwave noise characterization; Aluminum gallium nitride; Electron devices; Gallium nitride; HEMTs; Leakage current; Low-noise amplifiers; MODFETs; Microwave devices; Noise figure; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373658

Filename

4373658