DocumentCode :
1958430
Title :
Power efficiency of silicon nanocrystal based LED in pulsed regime
Author :
Marconi, A. ; Tengattini, A. ; Anopchenko, A. ; Pavesi, L. ; Pucker, G.
Author_Institution :
Dept. of Phys., Univ. of Trento, Povo, Italy
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
266
Lastpage :
268
Abstract :
Power efficiency of silicon nanocrystal light-emitting devices is studied in pulsed regime. A phenomenological opto-electrical model is proposed to explain the frequency dependent electroluminescence which has been found.
Keywords :
electro-optical effects; electroluminescence; elemental semiconductors; light emitting devices; nanophotonics; nanostructured materials; silicon; LED; Si; frequency dependent electroluminescence; phenomenological optoelectrical model; power efficiency; silicon nanocrystal; Conductivity; Frequency measurement; Impedance; Light emitting diodes; Nanocrystals; Silicon; Opto-electrical model; Power Efficiency; Silicon Nanocrystals;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053785
Filename :
6053785
Link To Document :
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