Title :
Design of surface-plasmon-enhanced Ge-Si light-emitting diode
Author :
Jeong, Intae ; Park, Young June
Author_Institution :
Grad. Sch. of Convergence Sci. & Technol., Dept. of Nano Sci. & Technol., Seoul Nat. Univ., Suwon, South Korea
Abstract :
We propose a FIN type Germanium-Silicon heterojunction light-emitting diode with metal gates on both sides. The metal gates provide the plasmon enhancement and the electrical modulation of the PN diode. Using the numerical analysis, we propose the optimal device structure to achieve the best light emitting efficiency.
Keywords :
Ge-Si alloys; light emitting diodes; surface plasmons; FIN type heterojunction light-emitting diode; PN diode; SiGe; electrical modulation; light emitting efficiency; light-emitting diodes; metal gates; surface plasmon enhancement; Logic gates; Photonic band gap;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053788
