• DocumentCode
    1958496
  • Title

    All-silicon integrated photodetector for near infrared wavelengths based on the internal photoemission effect

  • Author

    Casalino, M. ; Sirleto, L. ; Iodice, M. ; Gioffrè, M. ; Rendina, I. ; Coppola, G.

  • Author_Institution
    Inst. for Microelectron. & Microsyst., Nat. Res. Council, Naples, Italy
  • fYear
    2011
  • fDate
    14-16 Sept. 2011
  • Firstpage
    278
  • Lastpage
    280
  • Abstract
    We propose a near infrared all-silicon integrated photodetector based on the internal photoemission effect. Device is charactered by a responsivity of 0.08 mA/W at 1550 nm for a reverse bias of 1 V.
  • Keywords
    elemental semiconductors; infrared detectors; integrated optics; photodetectors; photoemission; silicon; Si; device responsivity; internal photoemission effect; near infrared all-silicon integrated photodetector; voltage 1 V; wavelength 1550 nm; Capacitance; Current measurement; Optical device fabrication; Optical films; Optical waveguides; Photodetectors; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics (GFP), 2011 8th IEEE International Conference on
  • Conference_Location
    London
  • ISSN
    1949-2081
  • Print_ISBN
    978-1-4244-8338-9
  • Type

    conf

  • DOI
    10.1109/GROUP4.2011.6053789
  • Filename
    6053789
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958496