• DocumentCode
    1958504
  • Title

    Study on phenolic-resin/carbon-fiber ablation composites modified with polyhedral oligomeric silsesquioxanes

  • Author

    Liu, Yu ; Lu, Zushun ; Chen, Xiaodong ; Wang, Di ; Liu, Jincheng ; Hu, Lijiang

  • Author_Institution
    Chem. Dept. of Sci. Sch., Harbin Inst. of Technol., Harbin
  • fYear
    2009
  • fDate
    5-8 Jan. 2009
  • Firstpage
    605
  • Lastpage
    608
  • Abstract
    This study focuses on phenolic-resin/carbon-fiber (PR/CF) ablation composites modified with polyhedral oligomeric silsesquioxane (POSS) and tetraethoxysilicate (TEOS). Four nanomodifiers based on diglycidyl ether of biphenol A (DGEBA), TEOS-SiO2 (T-SiO2), octamethyl-POSS (Me-POSS) and phenyl-POSS (Ph-POSS) were prepared and employed to modify the PR/CF ablation materials. To compare ablation properties of the four modifiers, the correlation of the material structures and ablation properties are discussed with ablation tests and morphology measured by SEM. As a result, the former three is not viable as modifiers to enhance the ablation resistance; on the contrary, the properties of Ph-POSS show that it is suitable and more effective as a modifier for ablation materials.
  • Keywords
    carbon fibre reinforced plastics; filled polymers; scanning electron microscopy; silicon compounds; C; SEM; SiO2; ablation resistance; biphenol A; carbon-fiber ablation; composites; diglycidyl ether; material morphology; material structures; nanomodifiers; octamethyl-polyhedral oligomeric silsesquioxane; phenolic-resin; phenyl-polyhedral oligomeric silsesquioxane; silicon dioxide; tetraethoxysilicate; Aerospace materials; Chemical technology; Composite materials; Mass spectroscopy; Morphology; Organic materials; Plastics; Resins; Scanning electron microscopy; Temperature; Ablation; Modifier; Morphology; Nanohybrid materials; Polyhedral oligomeric silsesquioxanes (POSS);
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
  • Conference_Location
    Shenzhen
  • Print_ISBN
    978-1-4244-4629-2
  • Electronic_ISBN
    978-1-4244-4630-8
  • Type

    conf

  • DOI
    10.1109/NEMS.2009.5068653
  • Filename
    5068653