Increased light emission by geometrical changes in Si LEDs

Author

Puliyankot, V. ; Piccolo, G. ; Hueting, R.J.E. ; Heringa, A. ; Kovalgin, A. ; Schmitz, J.

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2011

fDate

14-16 Sept. 2011

Firstpage

287

Lastpage

289

Abstract

This paper demonstrates increased light emission in Si p-i-n light emitting diodes (LEDs) by changing the geometry of the device. The theory behind this, the device fabrication, electrical and optical characteristics are also presented. Reducing the injector size, decreases the diffusion current as shown by IV measurements and simulations. As a result, for a particular on- current the pn-product and hence light increases inside the active region for the new devices. The electroluminescence (EL) intensity measurements show an enhanced light emission by more than a factor of four.

Keywords

electroluminescence; elemental semiconductors; light emitting diodes; p-i-n diodes; silicon; LED; ON current; Si; device fabrication; diffusion current; electrical characteristic; electroluminescence intensity; enhanced light emission; geometrical change; injector size; optical characteristic; p-i-n light emitting diode; Current measurement; Light emitting diodes; P-i-n diodes; Photonic band gap; Resistance; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Group IV Photonics (GFP), 2011 8th IEEE International Conference on

Conference_Location

London

ISSN

1949-2081

Print_ISBN

978-1-4244-8338-9

Type

conf

DOI

10.1109/GROUP4.2011.6053792

Filename

6053792