DocumentCode :
1958585
Title :
Improved adhesion between C-MEMS and substrate by micromechanical interlocking
Author :
Gong, Jie ; Tang, Zirong ; Shi, Tielin ; Liao, Guanglan ; Nie, Lei ; Liu, Shiyuan
Author_Institution :
Sch. of Mech. Sci.&Eng., Huazhong Univ. of Sci. & Technol., Wuhan
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
624
Lastpage :
627
Abstract :
This paper describes a new method to improve adhesion between high-aspect-ratio carbon micro/nano-structure and silicon substrate by micromechanical interlocking over conventional carbon micro-elecro-mechanical system (C-MEMS) process. Anisotropic wet chemical etching using potassium hydroxide (KOH) solution and aqueous tetramethyl ammonium hydroxide (TMAH) is applied to form various aspect-ratio and spacing pits in silicon substrate with and without a thin film layer of silicon dioxide, respectively. Great improvement on adhesion is demonstrated that the photoresist structure is found to remain robustly attached to substrate during the process of prolonged SU-8 photoresist development and immersion in heated 40% potassium hydroxide at 80degC. Furthermore, carbon MEMS after pyrolysis process is well bonded to silicon substrate without peeling off and high-aspect-ratio glassy-carbon MEMS remain upright.
Keywords :
adhesion; bonding processes; carbon; etching; microfabrication; micromechanical devices; photoresists; pyrolysis; SU-8 photoresist development; Si; adhesion; anisotropic wet chemical etching; aqueous tetramethyl ammonium hydroxide; aspect ratio; bonding process; high-aspect-ratio glassy-carbon MEMS; micromechanical interlocking; potassium hydroxide solution; pyrolysis process; silicon substrate; spacing pits; temperature 80 C; Adhesives; Anisotropic magnetoresistance; Chemicals; Micromechanical devices; Resists; Robustness; Semiconductor thin films; Silicon compounds; Substrates; Wet etching; Carbon MEMS; adhesion; micromechanical interlocking;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068658
Filename :
5068658
Link To Document :
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