DocumentCode :
1958592
Title :
Noise characterization of Ge/Si photodetectors
Author :
Colace, Lorenzo ; Scacchi, Andrea ; Assanto, Gaetano
Author_Institution :
Dept. of Electron. Eng., Univ. Roma Tre, Rome, Italy
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
290
Lastpage :
292
Abstract :
We investigate the noise in Ge/Si photodiodes. The noise performance is characterized by current voltage characteristics and spectral analysis and the results compared with reference Ge/Ge photodetectors. Both thermal and shot noise are of the same order, while Ge/Si devices exhibit a significantly larger 1/f noise.
Keywords :
1/f noise; elemental semiconductors; germanium; optical noise; photodetectors; photodiodes; semiconductor device noise; shot noise; silicon; thermal noise; 1/f noise; Ge-Si; current voltage characteristics; photodetectors; photodiodes; shot noise; spectral analysis; thermal noise; Dark current; Germanium; Noise; Noise measurement; Photodetectors; Silicon; Thermal noise; Ge/Si photodetectors; near infrared; noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053793
Filename :
6053793
Link To Document :
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