Title :
Dynamic Two-Port Parameters of Ballistic Carbon Nanotube FETs: A Quantum Simulation Study
Author :
Ouyang, Yijian ; Guo, Jing
Author_Institution :
Univ. of Florida, Gainesville
Abstract :
In this work, we simulated the intrinsic dynamic conductance matrix of ballistic CNTFETs using the time-dependent non-equilibrium Green´s function (NEGF) formalism.4´5 Plasmon wave propagation along ballistic metallic CNT interconnects is also studied.
Keywords :
approximation theory; carbon nanotubes; field effect transistors; integrated circuit interconnections; nanotube devices; semiconductor nanotubes; FET; ballistic carbon nanotube; dynamic two-port parameters; field- effect transistor; intrinsic cut-off frequency; intrinsic dynamic conductance matrix; metallic interconnects; plasmon wave propagation; quantum simulation; quasi-static approximation; single-walled metallic carbon nanotubes; time-dependent non-equilibrium Green´s function; Computational modeling; Cutoff frequency; Electrodes; Electrostatics; Impedance; Inductance; Plasmons; Quantum capacitance; Quantum computing; Voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373671
