Title :
Estimation of Trap Density in AlGaN/GaN HEMTs from Subthreshold Slope Study
Author :
Chung, J.W. ; Zhao, X. ; Palacios, T.
Author_Institution :
Massachusetts Inst. of Technol., Cambridge
Abstract :
In this paper, we first demonstrate effects of thermal annealing on subthreshold slope in AlGaN/GaN HEMTs. Then, based on the temperature dependence of subthreshold slope, we introduce a new method to estimate interface trap density in these devices.The understanding of this interface trap is critical to optimize the gate modulation efficiency of these transistors and maximize their high frequency performance.
Keywords :
III-V semiconductors; aluminium compounds; annealing; gallium compounds; high electron mobility transistors; interface states; wide band gap semiconductors; AlGaN-GaN; HEMT; gate modulation efficiency; interface trap density estimation; subthreshold slope; thermal annealing; Aluminum gallium nitride; Annealing; Frequency estimation; Gallium nitride; HEMTs; Leakage current; MODFETs; MOSFETs; Performance evaluation; Temperature dependence;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373674
