DocumentCode
1958695
Title
Exploring the 3D integration technology for CMOS image sensors
Author
Raymundo, Fernando ; Martin-Gonthier, Philippe ; Molina, Rafael ; Rolando, Sebastien ; Magnan, Pierre
Author_Institution
CIMI Image Sensor Lab., Univ. of Toulouse, Toulouse, France
fYear
2013
fDate
24-26 June 2013
Firstpage
1
Lastpage
5
Abstract
3D fabrication technologies allow microelectronic circuits such as processors or memories to achieve very high integration densities. These technologies applied to CMOS image sensors, make possible the implementation of specific processing architectures without damaging key parameters of CMOS imagers. This paper illustrates these benefits with an implementation of a 3D image sensor integrating at the pixel level a low noise circuit coupled to an analog to digital converter.
Keywords
CMOS image sensors; analogue-digital conversion; three-dimensional integrated circuits; 3D integration technology; CMOS image sensors; analog to digital converter; low noise circuit; pixel level; CMOS image sensors; CMOS integrated circuits; CMOS technology; Decoding; Random access memory; Three-dimensional displays; ADC; CMOS Image Sensor; Three dimensional integration technology; parallelism;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronics, Control, Measurement, Signals and their application to Mechatronics (ECMSM), 2013 IEEE 11th International Workshop of
Conference_Location
Toulouse
Type
conf
DOI
10.1109/ECMSM.2013.6648935
Filename
6648935
Link To Document