DocumentCode :
1958755
Title :
Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors
Author :
Nguyen, M.D. ; Steenwelle, R.J.A. ; te Riele, P.M. ; Dekkers, J.M. ; Blank, D.H.A. ; Rijnders, G.
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede
fYear :
2009
fDate :
5-8 Jan. 2009
Firstpage :
649
Lastpage :
652
Abstract :
Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 muC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.
Keywords :
dielectric hysteresis; dielectric polarisation; ferroelectric capacitors; ferroelectric thin films; lead compounds; permittivity; pulsed laser deposition; scanning electron microscopy; thin film capacitors; zirconium compounds; PZT; capacitance-voltage properties; coercive electric field; columnar structure; dielectric constant; dielectric properties; dissipation factor; electrode-film interface; ferroelectric properties; interfacial dead-layer existence; perovskite structure; polarization hysteresis loops; polycrystalline films; pulsed laser deposition; remnant polarization; scanning electron microscopy; size 250 mm; temperature 293 K to 298 K; thin film capacitors; Capacitance-voltage characteristics; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Frequency; Optical pulses; Polarization; Pulsed laser deposition; Scanning electron microscopy; Sputtering; Dielectric properties; dead-layer thickness; frequency responses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nano/Micro Engineered and Molecular Systems, 2009. NEMS 2009. 4th IEEE International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4244-4629-2
Electronic_ISBN :
978-1-4244-4630-8
Type :
conf
DOI :
10.1109/NEMS.2009.5068664
Filename :
5068664
Link To Document :
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