DocumentCode :
1958761
Title :
Inversion-type enhancement-mode InP MOSFETs with ALD Al2O3, HfO2 and HfAlO nanolaminates as high-k gate dielectrics
Author :
Wu, Y.Q. ; Xuan, Y. ; Ye, P.D. ; Cheng, Z. ; Lochtefeld, A.
Author_Institution :
Purdue Univ., West Lafayette
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
117
Lastpage :
118
Abstract :
We demonstrate here the use of ALD high-k dielectrics for the fabrication of E-mode InP MOSFETs exhibiting well-behaved transistor characteristics. These results suggest new opportunities for evaluating and applying InP as a novel high-mobility channel material for future ultimate CMOS applications.
Keywords :
CMOS integrated circuits; MOSFET; aluminium compounds; dielectric materials; hafnium compounds; indium compounds; laminates; ALD nanolaminates; Al2O3; CMOS; HfAlO; HfO2; InP; MOSFET; high-k gate dielectrics; high-mobility channel material; Capacitance-voltage characteristics; Drives; Electrons; Gallium arsenide; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Indium phosphide; MOSFETs; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373677
Filename :
4373677
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1958761
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