Barrier Lowering and Widening of Schottky Barrier MOSFETs by Self-Aligned Multiple Workfunction Gate

We propose a multiple workfunction gate (MWG) structure for SBMOS. We give the schematic view of MWG Schottky barrier MOSFETs (MWG SBMOS), where High (H) and Low (L) indicate different workfunction values are utilized at center and side gate regions, respectively. The MWG structure can be easily realized by a tilt angle implantation with a fully CMOS process.