• DocumentCode
    1958784
  • Title

    Reliability of 4H-SiC DMOSFETs Evaluated by Bias Stressing

  • Author

    Okayama, T. ; Arthur, S.D. ; Garrett, J.L. ; Rao, M.V.

  • Author_Institution
    George Mason Univ., Fairfax
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    In this work, the threshold voltage (VTH) of n-channel 4H-SiC double-implanted metal-oxide- semiconductor field effect transistors (DMOSFETs) was measured after different gate-bias-stress durations to determine if the bias-stress induces a shift in the VTH.
  • Keywords
    MOSFET; semiconductor device reliability; silicon compounds; wide band gap semiconductors; DMOSFET; SiC; bias stress induced instability; semiconductor device reliability; transfer curves; Double-gate FETs; Electric variables measurement; Electron traps; Intrusion detection; Semiconductor device reliability; Silicon carbide; Stress measurement; Temperature distribution; Threshold voltage; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373679
  • Filename
    4373679
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1958784