DocumentCode :
1958787
Title :
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
Author :
Hu, Weixuan ; Cheng, Buwen ; Xue, Chunlai ; Su, Shaojian ; Liu, Zhi ; Li, Yaming ; Wang, Qiming
Author_Institution :
State Key Lab. on Integrated Optoelectron., Beijing, China
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
314
Lastpage :
316
Abstract :
Epitaxy of Ge on offcut Si (001) for growth of In0.01Ga0.99As was studied. Anti-phase domains were prevented in In0.01Ga0.99As layer except on the In0.01Ga0.99As/Ge interface. Threading dislocations of Ge deteriorate the quality of In0.01Ga0.99As remarkably.
Keywords :
III-V semiconductors; MOCVD; dislocations; gallium arsenide; germanium; indium compounds; semiconductor epitaxial layers; semiconductor growth; Ge epitaxy; In0.01Ga0.99As; Si-Ge; antiphase domains; offcut Si (001); offcut Si substrate; threading dislocations; Films; Gallium arsenide; Rough surfaces; Silicon; Substrates; Surface morphology; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053801
Filename :
6053801
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1958787
بازگشت