Surface Treatment for Leakage Reduction in AlGaN/GaN HEMTs

Development of AIGaN/GaN HEMTs has been largely advanced in recent years, leading to record microwave power performance from solid-state devices. With the AIGaN/GaN HEMTs emerging as a viable technology for high frequency low noise amplifiers and power amplifiers, there are still several problems to be solved. One key problem is the relatively high gate leakage current, which may cause extra noise and reliability problems. In this report, we present a technology which reproducibly reduces gate leakage by two orders without introducing any negative effect on the device performance.