Title :
Avalanche-mode operation of a simple vertical p-i-n germanium photodiode coupled with a silicon waveguide
Author :
Yamada, K. ; Tsuchizawa, T. ; Watanabe, T. ; Kou, R. ; Nishi, H. ; Shinojima, H. ; Ishikawa, Y. ; Wada, K. ; Itabashi, S.
Author_Institution :
Microsyst. Integration Labs., NTT Corp., Atsugi, Japan
Abstract :
Avalanche-mode operation has been observed in a simple p-i-n germanium photodiode coupled with a silicon waveguide. Avalanche gain of ~3 was observed when a 15-V reverse bias was applied to a 1-μm-thick epitaxially-grown germanium layer. This result suggests the possibility of a simple avalanche structure without a silicon multiplication layer.
Keywords :
avalanche photodiodes; elemental semiconductors; germanium; optical waveguides; p-i-n photodiodes; silicon; Ge; Si; avalanche mode operation; avalanche structure; silicon waveguide; vertical p-i-n photodiode; Dark current; Gain; Optical device fabrication; Optical waveguides; PIN photodiodes; Silicon;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053806
