Title :
AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE
Author :
Pei, Y. ; Suh, C. ; Chu, R. ; Recht, F. ; Shen, L. ; Corrion, A. ; Poblenz, C. ; Speck, J. ; Mishra, U.K.
Author_Institution :
California Univ., Santa Barbara
Abstract :
In this paper, a report on high PAE, high breakdown-voltage HEMTs grown by ammonia MBE is discussed. First, an AlN nucleation layer was grown by plasma-assisted MBE on SiC. Then GaN buffer was grown by ammonia MBE, followed by 30 nm ammonia Al0.3Ga0.7N. A sheet charge of 1x1013 cm-2 with a mobility of 1500 cm2V-1s-1 was obtained from Hall measurements.
Keywords :
Hall effect; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; molecular beam epitaxial growth; nucleation; semiconductor growth; silicon compounds; wide band gap semiconductors; AIN nucleation layer; AlGaN-GaN; GaN buffer growth; Hall measurements; SiC; ammonia MBE; breakdown voltage HEMT; high electron mobility transistors; plasma-assisted MBE; power-added efficiency; Aluminum gallium nitride; Etching; Gallium nitride; Germanium; Gold; HEMTs; Lithography; Optical devices; Passivation; Plasma measurements;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373683
