DocumentCode :
1958978
Title :
Oxide-Induced Noise in Carbon Nanotube Devices
Author :
Lin, Yu-Ming ; Avouris, Phaedon
Author_Institution :
IBM, Yorktown Heights
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
139
Lastpage :
140
Abstract :
In this report, we employ suspended nanotubes to directly study the impact of the oxide on the electrical properties and noise characteristics of carbon nanotube devices, showing that the 1/f noise can be reduced significantly in a substrate-free environment.
Keywords :
1/f noise; carbon nanotubes; nanotube devices; semiconductor nanotubes; 1/f noise; C; carbon nanotube devices; device fabrication; device optimization; nanoelectronic circuits; nanoelectronic devices; oxide-induced noise; Carbon nanotubes; Electrodes; Etching; Fluctuations; Nanotube devices; Noise level; Noise reduction; Semiconductor device noise; Substrates; Working environment noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373687
Filename :
4373687
Link To Document :
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