Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products

Author

Barsky, Mike ; Biedenbender, Mike ; Mei, Xiaobing ; Liu, Po-Hsin ; Lai, Richard

Author_Institution

Northrop Grumman Space Technol., Redondo Beach

fYear

2007

fDate

18-20 June 2007

Firstpage

147

Lastpage

148

Abstract

NGST is developing advanced high frequency HEMT device and MMIC technologies to address imminent applications at MMW frequencies above 80 GHz through 300 GHz. The improved device transport characteristics, high transconductance, and gain at very high frequencies will benefit next generation communications, radar, imaging and radiometer systems. In this paper, we status the development and production of 0.1 mum GaAs HEMT, 0.1 mum InP HEMT and sub 0.1 mum InP HEMT technologies for high frequency mmW circuits.

Keywords

HEMT integrated circuits; MMIC; gallium arsenide; indium compounds; millimetre wave integrated circuits; GaAs; InP; MMIC technologies; MMW commercial product; NGST; advanced high frequency HEMT device; high electron mobility transistor; high frequency millimeter wave circuits; monolithic microwave integrated circuits; size 0.1 mum; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; Production; Radar imaging; Radiofrequency integrated circuits; Radiometry; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2007 65th Annual

Conference_Location

Notre Dame, IN

ISSN

1548-3770

Print_ISBN

978-1-4244-1101-6

Electronic_ISBN

1548-3770

Type

conf

DOI

10.1109/DRC.2007.4373691

Filename

4373691