Title :
Advanced InP and GaAs HEMT MMIC technologies for MMW commercial products
Author :
Barsky, Mike ; Biedenbender, Mike ; Mei, Xiaobing ; Liu, Po-Hsin ; Lai, Richard
Author_Institution :
Northrop Grumman Space Technol., Redondo Beach
Abstract :
NGST is developing advanced high frequency HEMT device and MMIC technologies to address imminent applications at MMW frequencies above 80 GHz through 300 GHz. The improved device transport characteristics, high transconductance, and gain at very high frequencies will benefit next generation communications, radar, imaging and radiometer systems. In this paper, we status the development and production of 0.1 mum GaAs HEMT, 0.1 mum InP HEMT and sub 0.1 mum InP HEMT technologies for high frequency mmW circuits.
Keywords :
HEMT integrated circuits; MMIC; gallium arsenide; indium compounds; millimetre wave integrated circuits; GaAs; InP; MMIC technologies; MMW commercial product; NGST; advanced high frequency HEMT device; high electron mobility transistor; high frequency millimeter wave circuits; monolithic microwave integrated circuits; size 0.1 mum; Frequency; Gallium arsenide; HEMTs; Indium phosphide; MMICs; Production; Radar imaging; Radiofrequency integrated circuits; Radiometry; Transconductance;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373691
