Title :
Ultra-Low Resistance Ohmic Contacts to InGaAs/InP
Author :
Singisetti, Uttam ; Crook, A.M. ; Lind, Erik ; Zimmerman, Jeramy D. ; Wistey, Mark A. ; Gossard, Arthur C. ; Rodwell, Mark J. W.
Author_Institution :
Univ. of California, Santa Barbara
Abstract :
An extremely low in situ metal contacts can be formed to (In,Ga)As on InP. it is also possible to form ultra low resistance ex situ contacts by improved surface treatment. However, unlike in situ contacts, ex situ contacts are very sensitive to surface preparation. Similar contact resistivities to InAs on GaAs were reported by Nittono et al. This is the first time such low metal-semiconductor contacts have been demonstrated in In0.53Ga0.47As system that does not deteriorate at least upto 500 degC. These thermally stable, extremely low resistances, ohmic contacts are an enabling technology for THz bandwidth InGaAs/InP HBTs, mm wave InGaAs HEMT technologies, and the evolving III-V MOSFET technologies.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave bipolar transistors; millimetre wave field effect transistors; ohmic contacts; III- V MOSFET technologies; InGaAs-InP; contact resistivities; low metal-semiconductor contacts; millimeter wave HEMT technologies; surface treatment; terahertz bandwidth HBT technologies; thermally stable contacts; ultra low resistance ex situ contacts; ultra-low resistance ohmic contacts; Bandwidth; Conductivity; Contact resistance; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Ohmic contacts; Surface resistance; Surface treatment; Thermal resistance;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373692
