DocumentCode :
1959073
Title :
Misalignment-tolerant high-speed silicon microring modulator with interleaved p-n junctions
Author :
Xiao, Xi ; Li, Zhiyong ; Hu, Yingtao ; Yu, Yude ; Yu, Jinzhong
Author_Institution :
State Key Lab. of integrated Optoelectron., Beijing, China
fYear :
2011
fDate :
14-16 Sept. 2011
Firstpage :
359
Lastpage :
361
Abstract :
We present a high-speed silicon microring resonator with misalignment-tolerant interleaved p-n junctions. Moderate doping concentration of 2×1017 cm-3 results in a VπL of 0.98 V·cm and a total propagation loss of <;17 dB/cm. 8 GHz modulation bandwidth and ~30 GHz electric RC bandwidth are experimentally demonstrated.
Keywords :
electro-optical modulation; elemental semiconductors; micro-optics; optical modulation; optical resonators; semiconductor doping; silicon; Si; bandwidth 8 GHz; doping concentration; electric RC bandwidth; high speed silicon microring resonator; interleaved p-n junctions; misalignment tolerant high speed silicon microring modulator; modulation bandwidth; Bandwidth; Optical device fabrication; Optical modulation; Optical waveguides; P-n junctions; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
ISSN :
1949-2081
Print_ISBN :
978-1-4244-8338-9
Type :
conf
DOI :
10.1109/GROUP4.2011.6053816
Filename :
6053816
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1959073
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