DocumentCode
1959084
Title
A fast and practical approach to the determination of junction temperature and thermal resistence for BJT/HBT devices
Author
Chen, Bo ; Ban Leong Ooi ; Kooi, Pang Shyan
Author_Institution
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
fYear
2004
fDate
7-7 Sept. 2004
Firstpage
588
Lastpage
591
Abstract
A simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BJT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method
Keywords
III-V semiconductors; heterojunction bipolar transistors; silicon; thermal resistance; BJT-HBT device; CW DC measurement; bipolar transistor; isothermal measurement; junction temperature; parameter extraction; thermal resistance; Bipolar transistors; Electric resistance; Electrical resistance measurement; Heterojunction bipolar transistors; Silicon; Temperature distribution; Temperature measurement; Thermal engineering; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Communications Systems, 2004. ICCS 2004. The Ninth International Conference on
Conference_Location
Singapore, China
Print_ISBN
0-7803-8549-7
Type
conf
DOI
10.1109/ICCS.2004.1359444
Filename
1359444
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