Title :
A fast and practical approach to the determination of junction temperature and thermal resistence for BJT/HBT devices
Author :
Chen, Bo ; Ban Leong Ooi ; Kooi, Pang Shyan
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore
Abstract :
A simple, robust but accurate method to extract the thermal resistance of BJT/HBT devices is proposed. It only needs the measured device DC I-V BJT/HBT devices, GaAs HBT, silicon BJT and SiGe HBTs. Compared to the measured results taken from both CW DC measurements and isothermal measurements, the extracted values using our method is in excellent agreement with the conventional method
Keywords :
III-V semiconductors; heterojunction bipolar transistors; silicon; thermal resistance; BJT-HBT device; CW DC measurement; bipolar transistor; isothermal measurement; junction temperature; parameter extraction; thermal resistance; Bipolar transistors; Electric resistance; Electrical resistance measurement; Heterojunction bipolar transistors; Silicon; Temperature distribution; Temperature measurement; Thermal engineering; Thermal resistance; Voltage;
Conference_Titel :
Communications Systems, 2004. ICCS 2004. The Ninth International Conference on
Conference_Location :
Singapore, China
Print_ISBN :
0-7803-8549-7
DOI :
10.1109/ICCS.2004.1359444
