Title :
10 Gb/s, 1×4 optical link for DRAM interconnect
Author :
Pyo, J. ; Shin, D.J. ; Lee, K. -H ; Ji, H. -C ; Na, K.W. ; Cho, K.S. ; Kim, S.G. ; Joe, I.S. ; Suh, S.D. ; Shin, Y.H. ; Choi, Y. ; Hong, S.Y. ; Byun, H.I. ; Lee, B.S. ; Ha, K.H. ; Park, Y.D. ; Chung, C.H.
Author_Institution :
Samsung Electron., Semicond. R&D Center, Yongin, South Korea
Abstract :
We present a 10-Gb/s, 1×4 optical link based on a DRAM-integration-ready bulk-silicon modulator for multi-drop CPU-DRAM interconnects. The bulk-silicon modulator operated at 10 Gb/s on a die, and at 5 Gb/s in a QFP package. The 1×4 optical link was limited not by signal integrity but by optical power budget, demonstrating its scalable capacity for the future multi-drop memory bus.
Keywords :
DRAM chips; elemental semiconductors; integrated optics; multiprocessing systems; optical interconnections; optical links; optical modulation; physics computing; silicon; DRAM-integration-ready bulk-silicon modulator; QFP package; Si; bit rate 10 Gbit/s; bit rate 5 Gbit/s; multidrop CPU-DRAM interconnects; multidrop memory bus; optical link; optical power budget; signal integrity; Fiber optics; Optical interconnections; Optical modulation; Photonics; Silicon; Modulators; Optical interconnects; Silicon waveguides;
Conference_Titel :
Group IV Photonics (GFP), 2011 8th IEEE International Conference on
Conference_Location :
London
Print_ISBN :
978-1-4244-8338-9
DOI :
10.1109/GROUP4.2011.6053819
