Title :
THz front-side illuminated quantum well photodetector
Author :
Patrashin, Mikhail ; Hosako, Iwao
Author_Institution :
Nat. Inst. of Inf. & Commun. Technol., Koganei
Abstract :
We have designed a front-side illuminated GaAs/AlGaAs detector with a targeted peak frequency of 3 THz (100 mum) in an effort to extend the successful implementation of infrared QW arrays to the terahertz range. A simple multilayer structure has 18-nm GaAs QWs sandwiched between AlGaAs barriers with an Al alloy fraction of 2%. The effect of different barrier widths and doping concentrations on the expected dark current and spectral response of the structure were numerically simulated.
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; gallium arsenide; nanoelectronics; optical arrays; optical multilayers; photodetectors; quantum well devices; semiconductor doping; submillimetre wave devices; GaAs-AlGaAs; alloy fraction; barrier widths; doping concentrations; frequency 3 THz; front-side illuminated quantum well photodetector; infrared QW arrays; multilayer structure; size 18 nm; Aluminum alloys; Dark current; Doping; Frequency; Gallium arsenide; Infrared detectors; Nonhomogeneous media; Numerical simulation; Photodetectors; Sensor arrays;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373697
