A novel method of anodic bonding

This paper reports a novel method of anodic bonding with 3 intermedia layers, silicon carbide, tungsten and silicon dioxide. The bonding process lasting 10 minutes is in vacuum, with temperature 400degC, pressing force 1000 N and voltage 1300 V. During the process, Si+ and O- ions react at the interface of silicon and glass wafers which create Si-O bonds and make bonding stable. After removing off the silicon substrate, a suspended membrane is fabricated. Using this method, membranes with different materials can be fabricated similarly. Compared to the traditional sacrificial layer method, this method can control the depth easily and avoid normal sticking problem.