Control of Threshold Voltage in 80 nm Gate Length InAs Vertical Nanowire WIGFETs

Numerous investigations have studied the performance of lateral transistors based on single nanowires, there are only a few studies of the fabrication and performance of vertical transistors with wrap-gates, so called WIGFETs. Based on our previous study of 800 nm gate length transistors, we have now scaled the technology to sub 100 nm gate length and study the lateral scaling of the nanowires in the transistor structure. It is demonstrated that the scaling provides a mean to adjust the threshold voltage of the transistor.