Gallium Nitride Nanowire Devices - Fabrication, Characterization, and Simulation

This study revealed that better gate geometries for GaN FETs can result in channel inversion hence enhancement mode in otherwise depletion mode devices. Circular shaped gate geometry resulted in improvement of transconductance per unit gate length by an order of magnitude over omega shaped top gate on the same nanowire. We have modeled the channel conductivity as a function of gate bias using two dimensional self consistent Poisson´s equation solver. This has provided us with an insight into the nature of depletion behavior of the nanowire transistors.