Title :
High performance In2O3 nanowire transistors using organic gate nanodielectrics
Author :
Ju, Sanghyun ; Lu, Gang ; Chen, Po-Chiang ; Facchetti, Antonio ; Zhou, Chongwu ; Marks, Tobin J. ; Janes, David B.
Author_Institution :
Purdue Univ., West Lafayette
Abstract :
In this study, we report high performance nanowire transistors using individual in 203 nanowires as channels, a multilayer self-assembled organic nano-dielectric (SAND) as the gate insulator (thickness -15 nm, capacitance -180 nF/cm2, and leakage current density ~1x10-6 A/cm2 up to 2 V). The NWTs use an individually addressable indium zinc oxide (IZO) bottom-gate and Al source/drain electrodes.
Keywords :
indium compounds; insulated gate field effect transistors; leakage currents; nanowires; semiconductor quantum wires; zinc compounds; In2O3; In2Zn2O5; gate insulator; indium zinc oxide; leakage current density; nanowire transistors; organic gate nanodielectrics; self-assembled organic nanodielectric; Capacitance; Chemistry; High performance computing; Nanoscale devices; Nanotechnology; Optical computing; Organic materials; Reliability engineering; Thin film transistors; Voltage;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373702
