DocumentCode
1959314
Title
Impact ionization FETs based on silicon nanowires
Author
Björk, M.T. ; Hayden, O. ; Knoch, J. ; Riel, H. ; Schmid, H. ; Riess, W.
Author_Institution
IBM Res. GmbH, Zurich
fYear
2007
fDate
18-20 June 2007
Firstpage
171
Lastpage
172
Abstract
Vertical impact ionization of single surround-gated silicon nanowire field-effect transistor (NW FET) have been demonstrated that allow for very steep sub-threshold swings, low operating voltages and low leakage current. As a result the standby power of highly integrated circuits dramatically decreases.
Keywords
elemental semiconductors; field effect integrated circuits; field effect transistors; impact ionisation; leakage currents; nanoelectronics; nanowires; silicon; Si; field-effect transistor; integrated circuits; leakage current; single surround-gated silicon nanowire FET; sub-threshold swings; vertical impact ionization; FETs; Impact ionization; Integrated circuit technology; Laboratories; Leakage current; Lithography; Low voltage; MOSFET circuits; Nanowires; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373703
Filename
4373703
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