Title :
An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions
Author :
Cohen, G.M. ; Solomon, P.M. ; Laux, S.E. ; Chu, J.O. ; Rooks, M.J. ; Haensch, W.
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights
Abstract :
The authors demonstrates that doped epitaxial contacts to a Si nanowire improve Ron and eliminate ambipolar conduction. Our n-FET mobility was shown to be comparable to standard n-channel Si mobility.
Keywords :
field effect transistors; nanowires; semiconductor quantum wires; silicon; Si; doped epitaxial contacts; drain regions; n-FET mobility; semiconductor nanowire channel; source regions; Contacts; Dielectric substrates; Electrical resistance measurement; FETs; Gold; Immune system; Silicides; Silicon; Threshold voltage; Wiring;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373705
