• DocumentCode
    1959349
  • Title

    An n-FET with a Si nanowire channel and doped epitaxially-thickened source and drain regions

  • Author

    Cohen, G.M. ; Solomon, P.M. ; Laux, S.E. ; Chu, J.O. ; Rooks, M.J. ; Haensch, W.

  • Author_Institution
    IBM T. J. Watson Res. Center, Yorktown Heights
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    175
  • Lastpage
    176
  • Abstract
    The authors demonstrates that doped epitaxial contacts to a Si nanowire improve Ron and eliminate ambipolar conduction. Our n-FET mobility was shown to be comparable to standard n-channel Si mobility.
  • Keywords
    field effect transistors; nanowires; semiconductor quantum wires; silicon; Si; doped epitaxial contacts; drain regions; n-FET mobility; semiconductor nanowire channel; source regions; Contacts; Dielectric substrates; Electrical resistance measurement; FETs; Gold; Immune system; Silicides; Silicon; Threshold voltage; Wiring;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373705
  • Filename
    4373705
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1959349