• DocumentCode
    1959366
  • Title

    Reduction of Acoustic Phonon Limited Electron Mobility due to Phonon Confinement in Silicon Nanowire MOSFETs

  • Author

    Hattori, Junichi ; Uno, C. Shigeyasu ; Mori, Nobuya ; Nakazato, Kazuo

  • Author_Institution
    Nagoya Univ., Nagoya
  • fYear
    2007
  • fDate
    18-20 June 2007
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    Reduction of acoustic phonons in a silicon nanowire (SiNW) MOSFET is analyzed in detail, and their impact on electron transport is examined theoretically. The form factor with confined phonons was found to be larger than that with bulk-like phonons. This increase would make electron mobility with confined phonons smaller than that with bulk-like phonons.
  • Keywords
    MOSFET; electron mobility; elemental semiconductors; nanoelectronics; nanowires; phonons; silicon; Si; acoustic phonon reduction; bulk-like phonons; electron mobility; electron transport; form factor; phonon confinement; silicon nanowire MOSFET; Acoustic devices; Acoustic scattering; Computer science; Electron mobility; MOSFETs; Particle scattering; Phonons; Silicon; Surface acoustic waves; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference, 2007 65th Annual
  • Conference_Location
    Notre Dame, IN
  • ISSN
    1548-3770
  • Print_ISBN
    978-1-4244-1101-6
  • Electronic_ISBN
    1548-3770
  • Type

    conf

  • DOI
    10.1109/DRC.2007.4373706
  • Filename
    4373706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1959366