Title :
Reduction of Acoustic Phonon Limited Electron Mobility due to Phonon Confinement in Silicon Nanowire MOSFETs
Author :
Hattori, Junichi ; Uno, C. Shigeyasu ; Mori, Nobuya ; Nakazato, Kazuo
Author_Institution :
Nagoya Univ., Nagoya
Abstract :
Reduction of acoustic phonons in a silicon nanowire (SiNW) MOSFET is analyzed in detail, and their impact on electron transport is examined theoretically. The form factor with confined phonons was found to be larger than that with bulk-like phonons. This increase would make electron mobility with confined phonons smaller than that with bulk-like phonons.
Keywords :
MOSFET; electron mobility; elemental semiconductors; nanoelectronics; nanowires; phonons; silicon; Si; acoustic phonon reduction; bulk-like phonons; electron mobility; electron transport; form factor; phonon confinement; silicon nanowire MOSFET; Acoustic devices; Acoustic scattering; Computer science; Electron mobility; MOSFETs; Particle scattering; Phonons; Silicon; Surface acoustic waves; Wave functions;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373706
