DocumentCode :
1959433
Title :
A hybrid silicon evanescent photodetector
Author :
Park, Hyundai ; Fang, Alexander W. ; Jones, Richard ; Cohen, Oded ; Raday, Omri ; Sysak, Matthew N. ; Paniccia, Mario J. ; Bowers, John E.
Author_Institution :
California Santa Barbara Univ., Santa Barbara
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
185
Lastpage :
186
Abstract :
The work presented here is a silicon evanescent waveguide photodetector utilizing AlGalnAs quantum wells as an absorbing region, covering a wavelength range up to 1600 nm with a quantum efficiency of 90 %. The materials and processing are compatible with the hybrid silicon photonic integrated circuit (PIC) technology platform which has already demonstrated lasers and optical amplifiers.
Keywords :
integrated optics; photodetectors; quantum wells; semiconductor lasers; waveguide lasers; absorbing region; hybrid silicon evanescent photodetector; hybrid silicon photonic integrated circuit; optical amplifiers; quantum wells; Integrated circuit technology; Integrated optics; Optical materials; Optical waveguides; Photodetectors; Photonic integrated circuits; Quantum well lasers; Silicon; Stimulated emission; Waveguide lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373710
Filename :
4373710
Link To Document :
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