DocumentCode :
1959470
Title :
Single Ultra Violet Photon Detection with 4H-SiC Avalanche Photodiodes
Author :
Bai, Xiaogang ; Mcintosh, Dion ; Liu, Handin ; Campbell, Joe
Author_Institution :
Univ. of Virginia, Charlottesville
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
189
Lastpage :
190
Abstract :
In this paper we report SiC APDs that achieve gain comparable to PMTs while exhibiting higher quantum efficiency and lower dark current. In addition, we report single photon detection at 265 nm.
Keywords :
avalanche photodiodes; photomultipliers; silicon compounds; wide band gap semiconductors; SiC; avalanche photodiodes; photomultiplier tubes; quantum efficiency; single ultra violet photon detection; size 265 nm; Avalanche photodiodes; Circuits; Dark current; Electric breakdown; Fiber lasers; Laser mode locking; Laser noise; Optical pulses; Power lasers; Silicon carbide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373712
Filename :
4373712
Link To Document :
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