Title :
Enhancement mode n-MOSFET with high-κ dielectric on GaAs substrate
Author :
Rajagopalan, K. ; Zurcher, P. ; Abrokwah, J. ; Droopad, R. ; Moran, D.A.J. ; Hill, R.J.W. ; Li, X. ; Zhou, H. ; Mclntyre, D. ; Thoms, S. ; Thayne, I.G. ; Passlack, M.
Author_Institution :
Freescale Semicond. Inc., Tempe
Abstract :
In this paper, we report MOS heterostructures grown by molecular beam epitaxy on III-V substrates, employing a high-κ dielectric stack comprised of gallium oxide and gadolinium gallium oxide. Mobilities exceeding 12,000 and 6,000 cm2/Vs, for sheet carrier concentration ns of about 2.5x1012 cm-2 were measured on MOSFET structures on InP and GaAs substrates, respectively. These structures were designed for enhancement mode operation and include a 10 nm thick strained InGa1-xAs channel layer with In mole fraction x of 0.3 and 0.75 on GaAs and InP substrates, respectively.
Keywords :
III-V semiconductors; MOSFET; carrier density; carrier mobility; gallium arsenide; high-k dielectric thin films; indium compounds; molecular beam epitaxial growth; semiconductor growth; GaAs; InGaAs; InP; MOS heterostructures growth; carrier mobilities; enhancement mode n-MOSFET; gadolinium gallium oxide; gallium oxide; high-kappa dielectric stack; molecular beam epitaxy; sheet carrier concentration; CMOS technology; Dielectric measurements; Dielectric substrates; Gallium arsenide; III-V semiconductor materials; Indium phosphide; MOSFET circuits; Proposals; Silicon; Transconductance;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373719
