DocumentCode :
1959667
Title :
High-performance submicron inversion-type enhancement-mode InGaAs MOSFET with maximum drain current of 360 mA/mm and transconductance of 130 mS/mm
Author :
Xuan, Y. ; Wu, Y.Q. ; Lin, H.C. ; Shen, T. ; Ye, P.D.
Author_Institution :
Purdue Univ., West Lafayette
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
207
Lastpage :
208
Abstract :
In this paper, we report, for the first time, submicron inversion-type E-mode n-channel MOSFETs on In0.53Ga0.47As using ALD AI2O3 as high-k gate dielectric with more than 360 mA/mm maximum drain current and 130 mS/mm transconductance. The device performance has a significant leap with 3000 times increase of the maximum drain current, compared to our previous results on In0.2Ga0.8As MOSFET.
Keywords :
III-V semiconductors; MOSFET; dielectric materials; gallium arsenide; indium compounds; Al2O3; In0.53Ga0.47As; drain current; high-k gate dielectric; n-channel MOSFET; submicron inversion-type enhancement-mode MOSFET; transconductance; Capacitance-voltage characteristics; Electronic mail; Gold; Hafnium; III-V semiconductor materials; Indium gallium arsenide; MOSFET circuits; Photonic band gap; Semiconductor device manufacture; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373720
Filename :
4373720
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1959667
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