DocumentCode :
1959682
Title :
Enhancement-mode In0.70Ga0.30As-channel MOSFETs with ALD Al2O3
Author :
Sun, Yanning ; Kiewra, E.W. ; de Souza, J.P. ; Koester, S.J. ; Fogel, K.E. ; Sadana, D.K.
Author_Institution :
IBM, Yorktown Heights
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
209
Lastpage :
210
Abstract :
In this paper, long-channel enhancement-mode In0.70Ga0.30As MOSFETs with ALD Al2O3 is demonstrated. These devices show good output and pinch-off characteristics, have Ion/Ion of 105, six orders of magnitude lower gate leakage than Schottky-gated devices, and a peak effective mobility of 1280 cm2/Vs. These results are promising for realizing scalable InGaAs-channel MOSFETs suitable for VLSI applications.
Keywords :
III-V semiconductors; MOSFET; VLSI; aluminium compounds; atomic layer deposition; gallium arsenide; indium compounds; In0.70Ga0.30As-Al2O3; VLSI applications; atomic layer deposition; enhancement-mode long channel MOSFET; peak effective mobility; pinch-off characteristics; Dielectrics; HEMTs; Lithography; MODFETs; MOSFETs; Optical buffering; Optical saturation; Sun; Transconductance; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373721
Filename :
4373721
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1959682
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