Title :
Ge/Si hetero-nanocrystal nonvolatile floating gate memory
Author :
Li, Bei ; Zhu, Yan ; Liu, Jianlin
Author_Institution :
Univ. of CA, Riverside
Abstract :
Silicon nanocrystal (NC) has been used as the charge storage in nonvolatile memory devices owing to their advantages of low operation voltage, small size and compatibility to the logic circuit. In order to improve the retention characteristics and the programming speed simultaneously, Ge/Si hetero-nanocrystal (HNC) was proposed to be used as the floating gate. In this presentation, we report the fabrication and characterization of Ge/Si HNC MOS memories.
Keywords :
Ge-Si alloys; MOS memory circuits; X-ray photoelectron spectra; atomic force microscopy; chemical vapour deposition; nanoelectronics; random-access storage; semiconductor storage; Ge-Si; LPCVD; MOS memories characterization; MOS memories fabrication; atomic force microscopy; hetero-nanocrystal nonvolatile floating gate memory; programming speed; retention characteristics; x-ray photoemission spectroscopy; Atomic force microscopy; Fabrication; Germanium; Hetero-nanocrystal memory; Laboratories; Logic circuits; Low voltage; Nanocrystals; Nonvolatile memory; Silicon;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373725
