A 1.75 dB Noise Figure UWB CMOS LNA with high pass filter in 0.18 µm technology

Author

Kargaran, Ehsan ; Zarghami, Majid ; Gorji, Ghobad ; Emadi, Mohammad

Author_Institution

Sadjad Inst. for Higher Educ., Mashhad, Iran

Volume

4

fYear

2010

fDate

9-11 July 2010

Firstpage

196

Lastpage

199

Abstract

A 3.1-10.6 GHz ultra-wideband (UWB) low noise amplifier (LNA) utilizing a simple high-pass input matching network is proposed. The broadband matching and the flat gain are two important factors for the broadband circuits. Besides those factors, the minimal Noise Figure (NF), good linearity, and the lower power consumption are also desired. The LNA is designed in the standard 0.18μm CMOS technology. The input reflection coefficient S₁₁ and output reflection coefficient S₂₂ are less than -7.8dB and -11dB. It achieved maximum power gain 10 dB and the minimum noise figure is 1.75dB. It consumes 12mW from a 1.8-V supply voltage. The designed system demonstrated relatively suitable response in different temperature and Variation 10% supply voltage.

Keywords

MMIC amplifiers; high-pass filters; impedance matching; integrated circuit design; integrated circuit modelling; integrated circuit noise; low noise amplifiers; microwave filters; ultra wideband technology; wideband amplifiers; LNA linearity; UWB CMOS LNA design; broadband matching; flat gain; frequency 3.1 GHz to 10.6 GHz; high pass filter; high-pass input matching network; input impedance matching; noise figure; power 12 mW; power gain; reflection coefficient; size 0.18 mum; ultrawideband low noise amplifier; voltage 1.8 V; CMOS integrated circuits; CMOS technology; Noise; Noise measurement; Low noise amplifier (LNA); high pass filter; noise figure (NF); ultra-wideband (UWB);

fLanguage

English

Publisher

ieee

Conference_Titel

Computer Science and Information Technology (ICCSIT), 2010 3rd IEEE International Conference on

Conference_Location

Chengdu

Print_ISBN

978-1-4244-5537-9

Type

conf

DOI

10.1109/ICCSIT.2010.5565126

Filename

5565126