DocumentCode
1959809
Title
Phase-change Memory
Author
Lam, Chung
Author_Institution
IBM, Yorktown Heights
fYear
2007
fDate
18-20 June 2007
Firstpage
223
Lastpage
226
Abstract
This paper reviews the current development status of phase-change memory (PCM), discusses advanced scaling of this technology along with a scaling demonstration. A probable development road map and a prospective view of future possible applications of PCM will also be presented.
Keywords
memory architecture; advanced scaling; phase-change memory; probable development road map; Conductivity; Crystalline materials; Lithography; Nitrogen; Phase change materials; Phase change memory; Phase change random access memory; Random access memory; Roads; Semiconductor diodes;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2007 65th Annual
Conference_Location
Notre Dame, IN
ISSN
1548-3770
Print_ISBN
978-1-4244-1101-6
Electronic_ISBN
1548-3770
Type
conf
DOI
10.1109/DRC.2007.4373728
Filename
4373728
Link To Document