Title :
Phase-change Memory
Author_Institution :
IBM, Yorktown Heights
Abstract :
This paper reviews the current development status of phase-change memory (PCM), discusses advanced scaling of this technology along with a scaling demonstration. A probable development road map and a prospective view of future possible applications of PCM will also be presented.
Keywords :
memory architecture; advanced scaling; phase-change memory; probable development road map; Conductivity; Crystalline materials; Lithography; Nitrogen; Phase change materials; Phase change memory; Phase change random access memory; Random access memory; Roads; Semiconductor diodes;
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
DOI :
10.1109/DRC.2007.4373728
