DocumentCode
1959871
Title
Nanolasers directly grown on Si
Author
Chang-Hasnain, Connie J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
fYear
2012
fDate
4-8 March 2012
Firstpage
1
Lastpage
1
Abstract
We report a completely new growth mode with which single crystalline InGaAs/GaAs nanopillars can be grown directly on silicon substrates at CMOS compatible temperature. Light emitting diodes, photovoltaic device and optically pumped lasers are achieved.
Keywords
CMOS integrated circuits; III-V semiconductors; MOCVD; gallium arsenide; indium compounds; integrated optoelectronics; light emitting diodes; nanofabrication; nanophotonics; nanostructured materials; optical pumping; semiconductor growth; semiconductor lasers; CMOS compatible temperature; InGaAs-GaAs; Si; growth mode; light emitting diodes; nanolasers; optically pumped lasers; photovoltaic device; silicon substrates; single crystalline nanopillars; Gallium arsenide; Indium gallium arsenide; Laser modes; Optical films; Optical pumping; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication Conference and Exposition (OFC/NFOEC), 2012 and the National Fiber Optic Engineers Conference
Conference_Location
Los Angeles, CA
ISSN
pending
Print_ISBN
978-1-4673-0262-3
Type
conf
Filename
6192109
Link To Document