DocumentCode :
1959892
Title :
Power-delay modeling of dynamic CMOS gates for circuit optimization
Author :
Rossello, J.L. ; Segura, J.
Author_Institution :
Phys. Dept., Balearic Islands Univ., Palma de Mallorca, Spain
fYear :
2001
fDate :
4-8 Nov. 2001
Firstpage :
494
Lastpage :
499
Abstract :
We present an accurate analytical expression to compute power and delay of domino CMOS circuits from a detailed description of internal capacitor switching and discharging currents. The expression obtained accounts for the main effects in complex sub-micron gates like velocity saturation effects, body effect, device sizes and coupling capacitors. The energy-delay product is also evaluated and analyzed. Results are compared to HSPICE simulations (level 50) for a 0.18 /spl mu/m CMOS technology.
Keywords :
CMOS digital integrated circuits; SPICE; VLSI; capacitors; circuit optimisation; circuit simulation; delays; electric current; integrated circuit design; integrated circuit modelling; 0.18 micron; CMOS technology; HSPICE simulations; body effect; circuit optimization; coupling capacitors; device sizes; domino CMOS circuits; dynamic CMOS gates; energy-delay product; internal capacitor discharging currents; internal capacitor switching currents; power-delay modeling; velocity saturation effects; CMOS logic circuits; Capacitance; Capacitors; Circuit optimization; Clocks; Delay; Energy consumption; MOSFETs; Power dissipation; Semiconductor device modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computer Aided Design, 2001. ICCAD 2001. IEEE/ACM International Conference on
Conference_Location :
San Jose, CA, USA
ISSN :
1092-3152
Print_ISBN :
0-7803-7247-6
Type :
conf
DOI :
10.1109/ICCAD.2001.968689
Filename :
968689
Link To Document :
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