SiGe-on-insulator substrate created by low-energy oxygen implantation into a thick pseudomorphic SiGe grown on Si[100]

Summary form only given. In this paper, we present a viable approach toward SiGe-based SOI. SiGe-based SOI substrates have become more important for both electronics and optoelectronics, since record electron mobility was reported recently by utilizing a tensilely-strained Si channel grown on a strain-relaxed SiGe buffer (Ismail et al., 1995). On the other hand, a high refractive index step at the SiGe-SiO/sub 2/ interface warrants a good reflector (Fukatsu, 1995). Recently, we have reported the fabrication of SiGe-SOI using a high-quality SiGe virtual substrate grown on a step graded Si/sub 1-x/Ge/sub x/ buffer by low-energy SIMOX techniques (Ishikawa et al., 1997, and Fukatsu et al., 1998). However, throughput and production cost is limited by the availability of such virtual substrates, which require complicated epitaxy. Here, we demonstrate a simplified method for SiGe-SOI fabrication by starting with a thick pseudomorphic SiGe-Si layer, which is easily accessible and offers a greater flexibility in design.