DocumentCode :
1959913
Title :
The brain and the computer
Author :
Boahen, Kwabena
Author_Institution :
Stanford Univ., Stanford
fYear :
2007
fDate :
18-20 June 2007
Firstpage :
235
Lastpage :
235
Abstract :
Summary form only given. Exactly fifty years ago, when he published "The computer and the brain" in 1957, John von Neumann foresaw computer designers benefiting from basing their designs on the brain. Interest in this topic has been renewed by the convergence in properties of transistors and ion-channels (the brain\´s transistors). At ten nanometers, a transistor\´s channel becomes so narrow that an electron trapped by a dangling bond at the surface (an unavoidable atomistic defect) blocks electron flow. The current turns off and on at random, as trapping and detrapping occurs stochastically. Such stochastic behavior, which corrupts the deterministic on/off states computers rely on to perform binary arithmetic, is also displayed by ion-channels. At under a nanometer in size, an ion-channel\´s gate is agitated by thermal forces, opening and closing randomly. I will describe efforts in the neuromorphic engineering community to explore how the brain computes with stochastic devices by emulating an ion-channel\´s ionic current directly with a transistor\´s electronic current. While a present-day transistor, at a hundred-nanometers wide, corresponds to a small population of ion-channels, not a single ion-channel, this analog approach provides an extremely efficient method to simulate the brain while at the same time laying the groundwork for building brain-like computers out of next decade\´s nanotransis-tors. John von Neumann was prescient in anticipating that computer designers could profit by modeling features of the brain in their designs - even though he did not foresee the remarkable device-level convergence.
Keywords :
electron traps; history; nanoelectronics; brain-like computers; computer design; electron trapping; ion-channel ionic current; nanotransistors; neuromorphic engineering; stochastic devices; transistor channel; transistor electronic current; Bonding; Brain modeling; Computational modeling; Computer displays; Convergence; Digital arithmetic; Electron traps; Neuromorphic engineering; Stochastic processes; Thermal force;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Device Research Conference, 2007 65th Annual
Conference_Location :
Notre Dame, IN
ISSN :
1548-3770
Print_ISBN :
978-1-4244-1101-6
Electronic_ISBN :
1548-3770
Type :
conf
DOI :
10.1109/DRC.2007.4373733
Filename :
4373733
Link To Document :
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